Nature MaterialsEngineering bonding sites enables uniform and robust self-assembled monolayer for stable perovskite solar cells
The study demonstrates that engineering bonding sites enhances the uniformity and stability of self-assembled monolayers for perovskite solar cells.
Published 2025.06.24View evidence and readiness →NatureSynaptic and neural behaviours in a standard silicon transistor
The study demonstrates that standard CMOS transistors can exhibit both neuronal and synaptic behaviors when voltage is applied in a novel way.
Published 2025.03.26View evidence and readiness →npj Computational MaterialsPhonon-limited electron mobility in polar semiconductors from first principles: the role of the effective mass
This study uses first-principles calculations and advanced computational techniques to demonstrate that the effective mass of electrons is a critical factor in determining phonon-limited mobility in polar semiconductors.
Published 2026-10-05View evidence and readiness →npj Computational MaterialsTrajectory-dependent electronic stopping in simulations of self-ion ranges in elemental semiconductors
This study develops a two-temperature molecular dynamics model that accurately simulates electronic stopping for self-ions in elemental semiconductors, including both channeled and incommensurate trajectories.
Published 2026-10-03View evidence and readiness →Journal of Circuits Systems and ComputersData-Driven Modeling and Circuit-Aware Optimization of Gate-All-Around Multi-Bridge Channel FETs
This study presents a physics-driven hybrid machine learning and evolutionary optimization framework for efficient sub-3 nm Gate-All-Around Multi-Bridge Channel FET design.
Published 2026-10-02View evidence and readiness →Communications PhysicsEvolution and breakdown of chiral anomaly in Weyl semiconductor tellurium
This study demonstrates that doped tellurium exhibits a highly tunable giant negative longitudinal magnetoresistance, which is linked to the chiral anomaly and persists up to room temperature.
Published 2026-09-26View evidence and readiness →Physics of the Solid StateTailoring the Optical Properties of MOCVD Grown InGaAs/InAlGaAs MQWs with GaAs Insertion‑Layer
This study demonstrates that a 2 nm-thick GaAs insertion layer optimizes the optical performance of InGaAs/InAlGaAs multiple quantum wells by suppressing localized carrier recombination.
Published 2026-09-24View evidence and readiness →Communications PhysicsUsing a resistor network to simulate charge transport in organic semiconductors through injection layers and transport layers
This study introduces a resistor network model with time-independent resistances to simulate charge transport in organic semiconductors, especially under high charge carrier density conditions.
Published 2026-09-24View evidence and readiness →Nature CommunicationsReversible photolithography of quantum dots achieves high-performance electroluminescence
This study presents a reversible photolithography method that enables dynamic control over quantum dot photolithography through a wavelength-gated ligand crosslinking and decrosslinking cycle, resulting in high-performance electroluminescence.
Published 2026-09-24View evidence and readiness →Nano LettersSelf-Aligned AlO x Spacer Enabling 10 nm-Scaled InZnSnO Thin-Film Transistors for 2T0C DRAM
This study demonstrates 10 nm channel length InZnSnO thin-film transistors using self-aligned AlOx spacers, achieving high performance for 2T0C DRAM applications.
Published 2026-09-19View evidence and readiness →Nature PhotonicsInverted phosphorescent OLEDs with plasmon coupling from quantum dot interlayers for enhanced efficiency
This study introduces a colloidal quantum dot interlayer in inverted phosphorescent OLEDs to reduce energy loss from surface plasmon polariton modes through plasmonic coupling.
Published 2026-09-15View evidence and readiness →Scientific ReportsEffect of cascaded centrifugal speed on scalability potential of few layer graphene via liquid phase exfoliation
This study examines how varying centrifugal speeds affect the exfoliation of graphite into few-layer graphene using liquid-phase exfoliation, aiming to enhance scalability for industrial applications.
Published 2026-09-12View evidence and readiness →Nature CommunicationsUltrahigh-sensitivity adaptive solar-blind organic neuromorphic sensors for robust corona discharge monitoring
This study presents a high-sensitivity organic neuromorphic solar-blind ultraviolet sensor that can detect extremely weak light, offering improved performance over existing corona discharge monitoring technologies.
Published 2026-09-04View evidence and readiness →Advanced Functional MaterialsShallow Trap States Control Electrical Performance of Amorphous Oxide Semiconductor Thin‐Film Transistors
The study measures shallow defect states in amorphous oxide semiconductor thin-film transistors and shows they control key electrical performance parameters like subthreshold swing and threshold voltage.
Published 2026-09-02View evidence and readiness →physica status solidi (a)Impact of Source Contact Segmentation on the Electrical Characteristics of 4H‐SiC Planar MOSFETs
This study investigates how source contact segmentation affects the electrical characteristics of 4H-SiC planar MOSFETs, showing reduced input capacitance and leakage current with increased on-resistance and forward voltage.
Published 2026-08-30View evidence and readiness →Scientific ReportsEffect of the asymmetry of plasmonic multi-shell nanoparticles on the optical response of semiconductor quantum dot-nonconcentric nanoshell hybrid systems
The study investigates how asymmetry in plasmonic nanoshells affects the optical properties of quantum dot systems using theoretical and numerical methods.
Published 2026-08-30View evidence and readiness →ACM Transactions on Architecture and Code OptimizationCambricon-FlexLLM: A Flexible Chiplet-Based Hybrid Architecture for On-Device 70B LLM Inference
Cambricon-FlexLLM is a hybrid architecture combining NPU and NAND flash chip for efficient on-device 70B LLM inference with reduced data movement overhead.
Published 2026-08-29View evidence and readiness →Nature CommunicationsIontrovoltaic effect based on triboelectrically induced ion polarization at semiconductor-liquid interfaces
This study introduces an iontrovoltaic mechanism that uses triboelectric effects to create ionic concentration gradients and enhance charge separation at semiconductor-liquid interfaces.
Published 2026-08-26View evidence and readiness →Scientific ReportsScalable and lightweight vision transformers for mixed-defect classification in semiconductor wafer maps
ViT-Tiny is a lightweight Vision Transformer with 5.7M parameters that uses domain-specific adaptations to achieve 98.4% accuracy in mixed-defect classification on semiconductor wafers, outperforming larger models and CNNs.
Published 2026-08-25View evidence and readiness →Microsystems & NanoengineeringSpin-based in-sensor computing magnetic tactile sensor for rapid identification of underwater targets
This study presents a wireless magnetic tactile sensor using in-sensor computing architecture for rapid underwater target identification, combining high linearity in force-to-magnetic signal conversion with ultra-fast detection.
Published 2026-08-25View evidence and readiness →PhotonicsReversed Size Dependence of External Quantum Efficiency in GaN Micro-LEDs with an AlGaN-Interlayered QW–QD Composite Active Region
The study demonstrates that GaN micro-LEDs with an AlGaN-interlayered QW–QD composite active region exhibit reversed size dependence of external quantum efficiency, with efficiency increasing as the device size decreases.
Published 2026-08-24View evidence and readiness →Advanced ScienceTriple‐Level Content‐Addressable Vertical NAND Flash Memory
This study presents a triple-level content-addressable vertical NAND flash memory that uses the threshold-voltage states of commercial triple-level-cell V-NAND devices to enable efficient in-memory search.
Published 2026-08-24View evidence and readiness →Nature MaterialsDegradation-assisted doping of organic semiconductors enabled by Lewis acids
This study demonstrates a degradation-assisted doping method for organic semiconductors using Lewis acids, which significantly increases hole density through unstable radical anions of p-doping agents.
Published 2026-08-14View evidence and readiness →